SSM6N815 Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 100 V, 2.0 A, 0.103 Ω@10V, TSOP6F

Part	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Mounting Type	FET Feature	Configuration	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM6N815R,LF	1.8 W	103 mOhm	6-SMD Flat Leads	2 A	MOSFET (Metal Oxide)	150 °C	290 pF	6-TSOP-F	Surface Mount	Logic Level Gate 4V Drive	2 N-Channel (Dual)	100 V	2.5 V	3.1 nC