FCPF360N65S3R0L-F154 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220F Ultra narrow lead

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220F Ultra narrow lead

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FCPF360N65S3R0L	730 pF	650 V	27 W	4.5 V	N-Channel	MOSFET (Metal Oxide)	Through Hole	10 V	10 A	30 V	TO-220-3 Full Pack	360 mOhm	18 nC	TO-220F-3	-55 °C	150 °C
ON Semiconductor FCPF360N65S3R0L-F154	730 pF	650 V	27 W	4.5 V	N-Channel	MOSFET (Metal Oxide)	Through Hole	10 V	10 A	30 V	TO-220-3 Full Pack	360 mOhm	18 nC	TO-220F-3	-55 °C	150 °C

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220F Ultra narrow lead

Key Features

• 700 V @ TJ= 150 °C

• Ultra Low Gate Charge (Typ. Qg= 18 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)

• Optimized Capacitance

• Internal Gate Resistance: 1 Ω

• Typ. RDS(on)= 310 mΩ

• RoHS Compliant

• 100% Avalanche Tested

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.