GD25Q40 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 4MBIT SPI/QUAD 8USON
| Part | Memory Type | Memory Organization | Access Time | Technology | Mounting Type | Clock Frequency | Package / Case | Memory Size | Memory Interface | Operating Temperature [Max] | Operating Temperature [Min] | Memory Format | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Supplier Device Package | Package / Case | Package / Case | Write Cycle Time - Word, Page | Package / Case | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 K | 7 ns | FLASH - NOR (SLC) | Surface Mount | 133 MHz | 8-XFDFN Exposed Pad | 512 kB | SPI - Quad I/O | 85 C | -40 ¯C | FLASH | 2 ms | 70 µs | 3.6 V | 2.7 V | 8-USON (3x2) | ||||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 K | 7 ns | FLASH - NOR (SLC) | Surface Mount | 133 MHz | 8-SOIC | 512 kB | SPI - Quad I/O | 125 °C | -40 °C | FLASH | 3.6 V | 2.7 V | 8-SOP | 0.154 in | 3.9 mm | 4 ms 140 µs | |||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 K | FLASH - NOR | Surface Mount | 104 MHz | 8-SOIC | 512 kB | SPI - Quad I/O | 85 C | -40 ¯C | FLASH | 2.4 ms | 50 µs | 3.6 V | 2.7 V | 8-SOP | 0.209 in 5.3 mm | ||||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 K | 7 ns | FLASH - NOR (SLC) | Surface Mount | 133 MHz | 8-XFDFN Exposed Pad | 512 kB | SPI - Quad I/O | 85 C | -40 ¯C | FLASH | 2 ms | 70 µs | 3.6 V | 2.7 V | 8-USON (1.5x1.5) | ||||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 K | 7 ns | FLASH - NOR (SLC) | Surface Mount | 133 MHz | 8-SOIC | 512 kB | SPI - Quad I/O | 85 C | -40 ¯C | FLASH | 2 ms | 70 µs | 3.6 V | 2.7 V | 8-SOP | 0.154 in | 3.9 mm | ||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 K | 7 ns | FLASH - NOR (SLC) | Surface Mount | 80 MHz | 8-SOIC | 512 kB | SPI - Quad I/O | 105 °C | -40 °C | FLASH | 4 ms | 60 µs | 3.6 V | 2.7 V | 8-SOP | 0.154 in | 3.9 mm | ||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 K | FLASH - NOR | Surface Mount | 104 MHz | 8-SOIC | 512 kB | SPI - Quad I/O | 85 C | -40 ¯C | FLASH | 2.4 ms | 50 µs | 3.6 V | 2.7 V | 8-SOP | 0.154 in | 3.9 mm | |||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 K | 7 ns | FLASH - NOR (SLC) | Surface Mount | 133 MHz | 8-XFDFN Exposed Pad | 512 kB | SPI - Quad I/O | 125 °C | -40 °C | FLASH | 3.6 V | 2.7 V | 8-USON (3x2) | 4 ms 140 µs | |||||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 K | 7 ns | FLASH - NOR (SLC) | Surface Mount | 133 MHz | 8-SOIC | 512 kB | SPI - Quad I/O | 85 C | -40 ¯C | FLASH | 2 ms | 70 µs | 3.6 V | 2.7 V | 8-SOP | 0.209 in 5.3 mm | |||||
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 512 K | 7 ns | FLASH - NOR (SLC) | Surface Mount | 133 MHz | 8-SOIC | 512 kB | SPI - Quad I/O | 125 °C | -40 °C | FLASH | 3.6 V | 2.7 V | 8-SOP | 0.154 in | 3.9 mm | 4 ms 140 µs | Automotive | AEC-Q100 |