HUF76609D3S Series

N-Channel Logic Level UltraFET Power MOSFET 100V, 10A, 165mΩ

Catalog

N-Channel Logic Level UltraFET Power MOSFET 100V, 10A, 165mΩ

Part	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
ON Semiconductor HUF76609D3ST	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	16 nC	TO-252AA	16 V	3 V	160 mOhm	10 A	49 W	-55 °C	175 ░C	425 pF	100 V	N-Channel	4.5 V 10 V	Surface Mount

N-Channel Logic Level UltraFET Power MOSFET 100V, 10A, 165mΩ

• Ultra Low On-Resistance- rDS(ON)= 0.160 Ω, VGS= 10 V- rDS(ON)= 0.165 Ω, VGS= 5 V

• Simulation Models- Temperature Compensated PSPICE®and SABER™ Electrical Models- SPICE and SABER Thermal Impedance Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs RGSCurves

N-Channel Logic Level UltraFET Power MOSFET 100 V, 10 A, 165 mΩ