BD238(LEGACY%20FAIRCHILD) Series

Power 2 Amp 80 V PNP 25W Bipolar Junction Transistor

Catalog

Power 2 Amp 80 V PNP 25W Bipolar Junction Transistor

Part	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Mounting Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature
ON Semiconductor BD238G	TO-126	2 A	-55 °C	150 °C	PNP	600 mV	25 W	Through Hole	3 MHz	40	TO-126-3 TO-225AA	80 V	100 µA
ON Semiconductor BD238STU	TO-126-3	2 A			PNP	600 mV	25 W	Through Hole	3 MHz	25 hFE	TO-126-3 TO-225AA	80 V	100 µA	150 °C

Catalog

Power 2 Amp 80 V PNP 25W Bipolar Junction Transistor

Key Features

• DC Current Gain hFE= 40 (Min) @ IC= 150 mA

• Pb-Free Package

Description

The Power 2 Amp 80 V PNP 25W Bipolar Junction Transistor is designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Complementary device BD237 (NPN)