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Dual P-Channel Enhancement Mode MOSFET
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Dual P-Channel Enhancement Mode MOSFET
Dual P-Channel Enhancement Mode MOSFET
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [y] | Package / Case [x] | Configuration | Supplier Device Package | Power - Max [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | -55 °C | 150 °C | 4.6 A | 1.1 V | 75 mOhm | Surface Mount | 6.5 nC | 20 V | Logic Level Gate | 608.4 pF | 8-SOIC | 3.9 mm | 0.154 in | 2 P-Channel | 8-SO | 1.15 W | MOSFET (Metal Oxide) |