BD13910 Series

1.5 A, 80 V NPN Power Bipolar Junction Transistor

Catalog

1.5 A, 80 V NPN Power Bipolar Junction Transistor

Part	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Mounting Type	Supplier Device Package
ON Semiconductor BD13910S	150 °C	80 V	TO-126-3 TO-225AA	1.5 A	100 nA	1.25 W	500 mV	63 hFE	NPN	Through Hole	TO-126-3
ON Semiconductor BD13910S	150 °C	80 V	TO-126-3 TO-225AA	1.5 A	100 nA	1.25 W	500 mV	63 hFE	NPN	Through Hole	TO-126-3

Catalog

1.5 A, 80 V NPN Power Bipolar Junction Transistor

Key Features

• Mininum Current Gain - hFE= 63 @ IC= 150 mA

• BD135, BD137, BD139 are complementary with BD136, BD138, BD140

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Description

This series of plastic, NPN Power Bipolar Junction Transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.