K817 Series

Catalog

OPTOISO 5KV TRANSISTOR 4DIP

Part	Package / Case	Current Transfer Ratio (Max) [Max]	Supplier Device Package	Current - DC Forward (If) (Max) [Max]	Vce Saturation (Max) [Max]	Voltage - Forward (Vf) (Typ)	Number of Channels	Voltage - Output (Max) [Max]	Mounting Type	Current Transfer Ratio (Min) [Min]	Turn On / Turn Off Time (Typ)	Operating Temperature [Max]	Operating Temperature [Min]	Output Type	Current - Output / Channel	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Current Transfer Ratio (Max)
Vishay General Semiconductor - Diodes Division K817P7	4-DIP (0.300" 7.62mm)	160 %	4-DIP	60 mA	300 mV	1.25 V	1	70 V	Through Hole	80 %	5 µs 6 µs	100 °C	-40 °C	1.81 mOhm	50 mA	4.7 µs	3 µs	DC
Vishay General Semiconductor - Diodes Division K817P9	4-DIP (0.300" 7.62mm)		4-DIP	60 mA	300 mV	1.25 V	1	70 V	Through Hole	200 %	5 µs 6 µs	100 °C	-40 °C	1.81 mOhm	50 mA	4.7 µs	3 µs	DC	400 %
Vishay General Semiconductor - Diodes Division K817P8	4-DIP (0.300" 7.62mm)		4-DIP	60 mA	300 mV	1.25 V	1	70 V	Through Hole	130 %	5 µs 6 µs	100 °C	-40 °C	1.81 mOhm	50 mA	4.7 µs	3 µs	DC	260 %
Vishay General Semiconductor - Diodes Division K817P1	4-DIP (0.300" 7.62mm)		4-DIP	60 mA	300 mV	1.25 V	1	70 V	Through Hole	40 %	5 µs 6 µs	100 °C	-40 °C	1.81 mOhm	50 mA	4.7 µs	3 µs	DC	80 %
Vishay General Semiconductor - Diodes Division K817P6	4-DIP (0.300" 7.62mm)		4-DIP	60 mA	300 mV	1.25 V	1	70 V	Through Hole	100 %	5 µs 6 µs	100 °C	-40 °C	1.81 mOhm	50 mA	4.7 µs	3 µs	DC	300 %