SIHP22 Series

Catalog

MOSFET N-CH 600V 20A TO220AB

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SIHP22N60AE-GE3	Through Hole	-55 °C	150 °C	30 V	180 mOhm	600 V	10 V	4 V	TO-220AB	MOSFET (Metal Oxide)	20 A	N-Channel	1451 pF	96 nC	179 W	TO-220-3
Vishay General Semiconductor - Diodes Division SIHP22N65E-GE3	Through Hole	-55 °C	150 °C	30 V	180 mOhm	650 V	10 V	4 V	TO-220AB	MOSFET (Metal Oxide)	22 A	N-Channel	2415 pF	110 nC	227 W	TO-220-3
Vishay General Semiconductor - Diodes Division SIHP22N60E-GE3	Through Hole	-55 °C	150 °C	30 V	180 mOhm	600 V	10 V	4 V		MOSFET (Metal Oxide)	21 A	N-Channel	1920 pF	86 nC	227 W	TO-220-3
Vishay General Semiconductor - Diodes Division SIHP22N60S-E3	Through Hole				190 mOhm	600 V		4 V	TO-220AB	MOSFET (Metal Oxide)	22 A	N-Channel	2810 pF	110 nC		TO-220-3
Vishay General Semiconductor - Diodes Division SIHP22N60AEL-GE3	Through Hole	-55 °C	150 °C	30 V	180 mOhm	600 V	10 V	4 V	TO-220AB	MOSFET (Metal Oxide)	21 A	N-Channel	1757 pF	82 nC		TO-220-3	208 W
Vishay General Semiconductor - Diodes Division SIHP22N60EF-GE3	Through Hole	-55 °C	150 °C	30 V	182 mOhm	600 V	10 V	4 V	TO-220 Full Pack	MOSFET (Metal Oxide)	19 A	N-Channel		96 nC	179 W	TO-220-3 Full Pack		1423 pF