SI4406 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 13A 8SO
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 20 V | 50 nC | 8-SOIC | N-Channel | 4.5 V 10 V | MOSFET (Metal Oxide) | 13 A | -55 °C | 150 °C | Surface Mount | 4.5 mOhm | 3 V |