BUK9M35-80E Series

N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33

Manufacturer: Freescale Semiconductor - NXP

Catalog

N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33

Part	Grade	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Qualification
Freescale Semiconductor - NXP BUK9M35-80EX	Automotive	MOSFET (Metal Oxide)	80 V	2.1 V	5 V	-55 °C	175 ░C	N-Channel	13.5 nC	LFPAK33	62 W	26 A	10 V	Surface Mount	31 mOhm	1804 pF	AEC-Q101

Catalog

N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33

Description

Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.