FFSH20120ADN-F155 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-3L

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-3L

Part	Grade	Current - Average Rectified (Io)	Qualification	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Speed
ON Semiconductor FFSH20120A-F085	Automotive	30 A	AEC-Q101	0 ns	1.2 kV	TO-247-2	175 ░C	-55 C	No Recovery Time	1220 pF	200 µA	SiC (Silicon Carbide) Schottky	TO-247-2	Through Hole
ON Semiconductor FFSH20120ADN-F085	Automotive	15 A	AEC-Q101	0 ns	1.2 kV	TO-247-3	175 ░C	-55 C	No Recovery Time	612 pF	200 µA	SiC (Silicon Carbide) Schottky	TO-247-3	Through Hole
ON Semiconductor FFSH20120ADN-F155					1.2 kV	TO-247-3	175 ░C	-55 C			200 µA	SiC (Silicon Carbide) Schottky	TO-247-3	Through Hole	1.75 V	1 Pair Common Cathode	10 A	200 mA 500 ns

Key Features

• Max Junction Temperature 175 °C

• Avalanche Rated 100 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery / No Forward Recovery

• AEC-Q101 qualified and PPAP Capable

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.