FDD4243_F085 Series

P-Channel PowerTrench® MOSFET, -40V, -14A, 64mΩ

Catalog

P-Channel PowerTrench® MOSFET, -40V, -14A, 64mΩ

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Grade	Power Dissipation (Max) [Max]	Qualification
ON Semiconductor FDD4243	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	1550 pF	P-Channel	6.7 A 14 A	44 mOhm	40 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	3 V	TO-252AA	42 W	29 nC
ON Semiconductor FDD4243-F085P	MOSFET (Metal Oxide)	-55 °C	175 ░C	Surface Mount	1550 pF	P-Channel	14 A	44 mOhm	40 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	3 V	TO-252AA		29 nC	Automotive	50 W	AEC-Q101
ON Semiconductor FDD4243-F085	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	1550 pF	P-Channel	6.7 A 14 A	44 mOhm	40 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	3 V	TO-252AA		29 nC	Automotive	50 W	AEC-Q101

Catalog

P-Channel PowerTrench® MOSFET, -40V, -14A, 64mΩ

Key Features

• Typ rDS(on)= 36mΩ at VGS= -10V, ID= -6.7A

• Typ rDS(on)= 48mΩ at VGS= -4.5V, ID= -5.5A

• Typ Qg(TOT)= 21nC at VGS= -10V

• High performance trench technology for extremely low rDS(on)

• RoHS Compliant

• Qualified to AEC Q101

Description

This P-Channel MOSFET has been produced using a proprietary PowerTrench®technology to deliver low rDS(on)and optimized Bvdss capability to offer superior performance benefit in the applications.