NVMJST2D6N08H Series

Single N-Channel Power MOSFET 80V, 157A, 2.8 mΩ on Top Cool Package

Catalog

Single N-Channel Power MOSFET 80V, 157A, 2.8 mΩ on Top Cool Package

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Power Dissipation (Max)	Package / Case	Package / Case [custom]	Package / Case [custom]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Mounting Type
ON Semiconductor NVMJST2D6N08HTXG	10-TCPAK	28 A 131.5 A	2.8 mOhm	4 V	MOSFET (Metal Oxide)	AEC-Q101	-55 °C	175 ░C	N-Channel	68 nC	20 V	5.3 W 116 W	10-PowerLSOP	5.3 mm	0.209 in	4405 pF	80 V	10 V	Automotive	Surface Mount

Catalog

Single N-Channel Power MOSFET 80V, 157A, 2.8 mΩ on Top Cool Package

Key Features

• Top Side Cooling

• Small Footprint (5x7 mm)

• Low RDS(on)

• Low QGand Capacitance

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET in a TCPAK5x7 package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.