FDS6699S Series

N-Channel PowerTrench® SyncFET™, 30V, 21A, 3.6mΩ

Catalog

N-Channel PowerTrench® SyncFET™, 30V, 21A, 3.6mΩ

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Rds On (Max) @ Id, Vgs
ON Semiconductor FDS6699S	3 V	2.5 W	-55 °C	150 °C	91 nC	4.5 V 10 V	3610 pF	20 V	8-SOIC	21 A	Surface Mount	MOSFET (Metal Oxide)	30 V	8-SOIC	3.9 mm	0.154 in	N-Channel	3.6 mOhm

Catalog

N-Channel PowerTrench® SyncFET™, 30V, 21A, 3.6mΩ

Key Features

• 21A, 30V

• RDS(ON)= 3.6 mΩ @ VGS= 10V

• RDS(ON)= 4.5 mΩ @ VGS= 4.5V

• Includes SyncFET Schottky body diode

• High performance trench technology for extremely low RDS(ON)and fast switching

• High power and current handling capability

• 100% RG(Gate Resistance) tested

Description

The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDS6699S includes an integrated Schottky diode using a monolithic SyncFET technology.