NVH4L027N65S3F Series

SUPERFET III MOSFET, 650V, 27mohm

Catalog

SUPERFET III MOSFET, 650V, 27mohm

Part	Power Dissipation (Max)	Vgs (Max)	Qualification	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
ON Semiconductor NVH4L027N65S3F	595 W	30 V	AEC-Q101	TO-247-4	10 V	227 nC	Automotive	650 V	75 A	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	TO-247-4L	5 V	27.4 mOhm	7780 pF	Through Hole

Catalog

SUPERFET III MOSFET, 650V, 27mohm

Key Features

• Best in Class body diode

• Internal Rg

• Lower RDS(ON)/ Same Packages

• Lower FOM (RDS (ON) maxX QG typ& RDS (ON) maxX EOSS)

• Internal Zener / 650 V BVdss

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability