SIRA18 Series

Catalog

MOSFET N-CH 30V 33A PPAK SO-8

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SIRA18DP-T1-RE3	PowerPAK® SO-8	-55 °C	150 °C	MOSFET (Metal Oxide)	4.5 V 10 V	2.4 V	7.5 mOhm	1000 pF	21.5 nC	PowerPAK® SO-8	-16 V 20 V	33 A	30 V	Surface Mount	14.7 W	N-Channel
Vishay General Semiconductor - Diodes Division SIRA18ADP-T1-GE3	PowerPAK® SO-8	-55 °C	150 °C	MOSFET (Metal Oxide)	4.5 V 10 V	2.4 V	8.7 mOhm	1000 pF	21.5 nC	PowerPAK® SO-8	-16 V 20 V	30.6 A	30 V	Surface Mount	14.7 W	N-Channel
Vishay General Semiconductor - Diodes Division SIRA18BDP-T1-GE3	PowerPAK® SO-8	-55 °C	150 °C	MOSFET (Metal Oxide)	4.5 V 10 V	2.4 V	6.83 mOhm		19 nC	PowerPAK® SO-8	-16 V 20 V	19 A 40 A	30 V	Surface Mount	3.8 W 17 W	N-Channel	680 pF