IRFD310 Series

Catalog

MOSFET N-CH 400V 350MA 4DIP

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case
Vishay General Semiconductor - Diodes Division IRFD310	1 W	-55 °C	150 °C	17 nC	N-Channel	3.6 Ohm	MOSFET (Metal Oxide)	170 pF	4 V	Through Hole	400 V	10 V	20 V	350 mA	4-DIP (0.300" 7.62mm)
Vishay General Semiconductor - Diodes Division IRFD310PBF	1 W	-55 °C	150 °C	17 nC	N-Channel	3.6 Ohm	MOSFET (Metal Oxide)	170 pF	4 V	Through Hole	400 V	10 V	20 V	350 mA	4-DIP (0.300" 7.62mm)