SI5856 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 20V 4.4A 1206-8
| Part | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | FET Feature | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 40 mOhm | 20 V | -55 °C | 150 °C | 7.5 nC | N-Channel | 4.4 A | 1.1 W | Surface Mount | Schottky Diode (Isolated) | 1.8 V 4.5 V | 8 V | 1206-8 ChipFET™ | 1 V | MOSFET (Metal Oxide) |