RSJ650N10 Series
Manufacturer: Rohm Semiconductor
Beta
⌘K
MOSFETS 4V DRIVE NCH MOSFET
| Part | Power Dissipation (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Grade | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature | Mounting Type | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 100 W | LPTS | 260 nC | 9.1 mOhm | 65 A | N-Channel | 2.5 V | 10780 pF | MOSFET (Metal Oxide) | 20 V | 4 V | 10 V | Automotive | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 °C | Surface Mount | AEC-Q101 |