NTD85N02R Series

Power MOSFET 24V 85A 5.2 mOhm Single N-Channel DPAK

Catalog

Power MOSFET 24V 85A 5.2 mOhm Single N-Channel DPAK

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Vgs (Max)	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTD85N02R	24 V	5.2 mOhm	78.1 W	1.25 W	20 V	N-Channel	MOSFET (Metal Oxide)	2050 pF	4.5 V 10 V	Surface Mount	DPAK	2 V	12 A 85 A	17.7 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C
ON Semiconductor NTD85N02R-001	24 V	5.2 mOhm	78.1 W	1.25 W	20 V	N-Channel	MOSFET (Metal Oxide)	2050 pF	4.5 V 10 V	Through Hole	IPAK	2 V	12 A 85 A	17.7 nC	IPAK TO-251-3 Short Leads TO-251AA	-55 °C	150 °C
ON Semiconductor NTD85N02RT4	24 V	5.2 mOhm	78.1 W	1.25 W	20 V	N-Channel	MOSFET (Metal Oxide)	2050 pF	4.5 V 10 V	Surface Mount	DPAK	2 V	12 A 85 A	17.7 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C
ON Semiconductor NTD85N02R-1G	24 V	5.2 mOhm	78.1 W	1.25 W	20 V	N-Channel	MOSFET (Metal Oxide)	2050 pF	4.5 V 10 V	Through Hole	IPAK	2 V	12 A 85 A	17.7 nC	IPAK TO-251-3 Short Leads TO-251AA	-55 °C	150 °C

Power MOSFET 24V 85A 5.2 mOhm Single N-Channel DPAK

• Planar HD3e Process for Fast Switching Performance

• Low RDS(on) to Minimize Conduction Loss

• Low Ciss to Minimize Driver Loss

• Low Gate Charge

• Pb-Free Packages are Available