MSRT25060 Series
Manufacturer: GeneSiC Semiconductor
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DIODE MODULE GP 600V 250A 3TOWER
| Part | Technology | Current - Reverse Leakage @ Vr | Package / Case | Speed [Min] | Voltage - Forward (Vf) (Max) @ If | Diode Configuration | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | Standard | 15 µA | Three Tower | 200 mA 500 ns | 1.2 V | 1 Pair Common Cathode | -55 °C | 150 °C | Three Tower | 600 V | Chassis Mount | 250 A |