SIHA105 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 600V 12A TO220
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Technology | Rds On (Max) @ Id, Vgs [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | Through Hole | 12 A | TO-220 Full Pack | 30 V | 600 V | 5 V | 53 nC | 1804 pF | 35 W | MOSFET (Metal Oxide) | 102 mOhm | N-Channel | 10 V | TO-220-3 Full Pack |