CLS03 Series
Manufacturer: Toshiba Semiconductor and Storage
DIODE SCHOTTKY 60V 10A L-FLAT
| Part | Current - Average Rectified (Io) | Technology | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Capacitance @ Vr, F | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Speed | Mounting Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 10 A | Schottky | -40 °C | 125 °C | 345 pF | L-FLAT™ | 60 V | L-FLAT™ (4x5.5) | 200 mA 500 ns | Surface Mount | 1 mA | 580 mV |
Toshiba Semiconductor and Storage | 10 A | Schottky | -40 °C | 125 °C | 345 pF | L-FLAT™ | 60 V | L-FLAT™ (4x5.5) | 200 mA 500 ns | Surface Mount | 1 mA | 580 mV |
Toshiba Semiconductor and Storage | 10 A | Schottky | -40 °C | 125 °C | 345 pF | L-FLAT™ | 60 V | L-FLAT™ (4x5.5) | 200 mA 500 ns | Surface Mount | 1 mA | 580 mV |
Toshiba Semiconductor and Storage | 10 A | Schottky | -40 °C | 125 °C | 345 pF | L-FLAT™ | 60 V | L-FLAT™ (4x5.5) | 200 mA 500 ns | Surface Mount | 1 mA | 580 mV |