Catalog
PNP Epitaxial Silicon Transistor
Key Features
• Low Frequency Amplifier
• Collector-Base Voltage : VCBO= -60V
• Complement to KSC945
• Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)
PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor
| Part | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Transistor Type | Frequency - Transition | Supplier Device Package | Mounting Type | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | TO-226-3 TO-92-3 | 50 V | 150 °C | PNP | 180 MHz | TO-92-3 | Through Hole | 150 mA | 200 | 100 nA | 250 mW |
ON Semiconductor | TO-226-3 TO-92-3 | 50 V | 150 °C | PNP | 180 MHz | TO-92-3 | Through Hole | 150 mA | 200 | 100 nA | 250 mW |
ON Semiconductor | TO-226-3 TO-92-3 | 50 V | 150 °C | PNP | 180 MHz | TO-92-3 | Through Hole | 150 mA | 120 | 100 nA | 250 mW |
ON Semiconductor | TO-226-3 TO-92-3 | 50 V | 150 °C | PNP | 180 MHz | TO-92-3 | Through Hole | 150 mA | 200 | 100 nA | 250 mW |
ON Semiconductor | TO-226-3 TO-92-3 | 50 V | 150 °C | PNP | 180 MHz | TO-92-3 | Through Hole | 150 mA | 120 | 100 nA | 250 mW |
ON Semiconductor | TO-226-3 TO-92-3 | 50 V | 150 °C | PNP | 180 MHz | TO-92-3 | Through Hole | 150 mA | 120 | 100 nA | 250 mW |