FQU3N50C Series

Power MOSFET, N-Channel, QFET®, 500 V, 2.5 A, 2.5 Ω, IPAK

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 2.5 A, 2.5 Ω, IPAK

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Technology	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
ON Semiconductor FQU3N50CTU	2.5 A	35 W	365 pF	30 V	500 V	-55 °C	150 °C	IPAK	N-Channel	MOSFET (Metal Oxide)	Through Hole	4 V	13 nC	2.5 Ohm	10 V	IPAK TO-251-3 Short Leads TO-251AA

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 2.5 A, 2.5 Ω, IPAK

Key Features

• 2.5A, 500V, RDS(on)= 2.5Ω(Max.) @VGS= 10 V, ID= 1.25A

• Low gate charge ( Typ. 10nC)

• Low Crss( Typ. 8.5pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.