APTM50 Series
Manufacturer: Microsemi Corporation
MOSFET 6N-CH 500V 51A SP6-P
| Part | Package / Case | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | SP6 | 5 V | MOSFET (Metal Oxide) | SP6-P | 51 A | Chassis Mount | 78 mOhm | 500 V | 390 W | -40 °C | 150 °C | 7000 pF | 6 N-Channel (3-Phase Bridge) | 140 nC | |
Microsemi Corporation | SP6 | 5 V | MOSFET (Metal Oxide) | SP6 | 99 A | Chassis Mount | 39 mOhm | 500 V | 781 W | -40 °C | 150 °C | 2 N-Channel (Dual) Asymmetrical | 280 nC | 14000 pF | |
Microsemi Corporation | SP1 | 5 V | MOSFET (Metal Oxide) | SP1 | 50 A | Chassis Mount | 84 mOhm | 500 V | 390 W | -40 °C | 150 °C | 2 N-Channel | 340 nC | 10800 pF | |
Microsemi Corporation | SP3 | 5 V | MOSFET (Metal Oxide) | SP3 | 51 A | Chassis Mount | 78 mOhm | 500 V | 390 W | -40 °C | 150 °C | 2 N-Channel (Dual) Asymmetrical | 340 nC | 10800 pF | |
Microsemi Corporation | SP4 | 5 V | Silicon Carbide (SiC) | SP4 | 170 A | Chassis Mount | 500 V | 1250 W | -40 °C | 150 °C | 2 N-Channel | 492 nC | 22400 pF |