SI1002 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 610MA SC75A
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | FET Type | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 220 mW | 1.5 V 4.5 V | 30 V | 8 V | MOSFET (Metal Oxide) | Surface Mount | 36 pF | 1 V | 560 mOhm | 2 nC | -55 °C | 150 °C | SC-75A | N-Channel | 610 mA | SC-75A |