Catalog
2-in-1 Notebook DDR Power Controller
Key Features
• Incorporates VDDQ, VTT Regulator, Buffered VREF
• Adjustable VDDQ Output
• VTT and VREF Track VDDQ/2
• Operates from Single 5.0 V Supply
• Supports VDDQ Conversion Rails from 4.5 V to 24 V
• Power-saving Mode for High Efficiency at Light Load
• Integrated Power FETs with VTT Regulator Sourcing/Sinking 1.5 A DC and 2.4 A Peak Current
• Requires Only 20 µF Ceramic Output Capacitor for VTT
• Buffered Low Noise 15 mA VREFOutput
• All External Power MOSFETs are N-channel
• <5.0 µA Current Consumption During Shutdown
• Fixed Switching Frequency of 400 kHz
• Soft-start Protection for VDDQand VTT
• Undervoltage Monitor of Supply Voltage
• Overvoltage Protection and Undervoltage Protection for VDDQ
• Short-circuit Protection for VDDQand VTT
• Thermal Shutdown
Description
AI
The NCP5218 2-in-1 Notebook DDR Power Controller is specifically designed as a total power solution for notebook DDR memory system. This IC combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of linear regulators for the VTT termination voltage and the buffered low noise reference. This IC contains a synchronous PWM buck controller for driving two external NFETs to form the DDR memory supply voltage (VDDQ). The DDR memory termination regulator output voltage (VTT) and the buffered VREF are internally set to track at the half of VDDQ. An internal power good voltage monitor tracks VDDQ output and notifies the user whether the VDDQ output is within target range. Protective features include soft-start circuitries, undervoltage monitoring of supply voltage, VDDQ overcurrent protection, VDDQ overvoltage and undervoltage protections, and thermal shutdown.