Catalog
IGBT - Automotive Grade 1200 V 40 A
Key Features
• AEC Q101 qualified
• Tight Parameter distribution
• Low Vcesat
• Low Eoff & Eon
Description
AI
AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.