MBR12020 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 20V 120A 2TOWER
| Part | Voltage - Forward (Vf) (Max) @ If [Max] | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Package / Case | Speed | Technology | Mounting Type | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 650 mV | 1 Pair Common Cathode | 120 A (DC) | 3 mA | 20 V | Twin Tower | Twin Tower | 200 mA 500 ns | Schottky | Chassis Mount | -55 °C | 150 °C |
GeneSiC Semiconductor | 650 mV | 1 Pair Common Anode | 120 A (DC) | 3 mA | 20 V | Twin Tower | Twin Tower | 200 mA 500 ns | Schottky | Chassis Mount | -55 °C | 150 °C |