FQI1 Series

Catalog

600V 10.5A 700MΩ@10V,5.3A 5V 1 N-CHANNEL I2PAK(TO-262) MOSFETS ROHS

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQI12N60TU	700 mOhm	600 V	I2PAK TO-262-3 Long Leads TO-262AA	10.5 A	MOSFET (Metal Oxide)	5 V	TO-262 (I2PAK)	1900 pF	10 V	Through Hole	-55 °C	150 °C	30 V	3.13 W 180 W	N-Channel	54 nC
ON Semiconductor FQI13N06LTU	110 mOhm	60 V	I2PAK TO-262-3 Long Leads TO-262AA	13.6 A	MOSFET (Metal Oxide)	2.5 V	TO-262 (I2PAK)			Through Hole	-55 °C	175 ░C	20 V	3.75 W 45 W	N-Channel	6.4 nC	350 pF	10 V	5 V
ON Semiconductor FQI13N06LTU	110 mOhm	60 V	I2PAK TO-262-3 Long Leads TO-262AA	13.6 A	MOSFET (Metal Oxide)	2.5 V	TO-262 (I2PAK)			Through Hole	-55 °C	175 ░C	20 V	3.75 W 45 W	N-Channel	6.4 nC	350 pF	10 V	5 V
ON Semiconductor FQI12N50TU	490 mOhm	500 V	I2PAK TO-262-3 Long Leads TO-262AA	12.1 A	MOSFET (Metal Oxide)	5 V	TO-262 (I2PAK)	2020 pF	10 V	Through Hole	-55 °C	150 °C	30 V		N-Channel					51 nC