IRF540 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 28A D2PAK
| Part | Supplier Device Package | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-263 (D2PAK) | 4 V | MOSFET (Metal Oxide) | 77 mOhm | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1700 pF | 100 V | 20 V | N-Channel | -55 °C | 175 ░C | 28 A | 3.7 W 150 W | 72 nC | 10 V |
Vishay General Semiconductor - Diodes Division | TO-262 | 4 V | MOSFET (Metal Oxide) | 77 mOhm | Through Hole | I2PAK TO-262-3 Long Leads TO-262AA | 1700 pF | 100 V | 20 V | N-Channel | -55 °C | 175 ░C | 28 A | 72 nC | 10 V | |
Vishay General Semiconductor - Diodes Division | TO-263 (D2PAK) | 4 V | MOSFET (Metal Oxide) | 77 mOhm | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1700 pF | 100 V | 20 V | N-Channel | -55 °C | 175 ░C | 28 A | 3.7 W 150 W | 72 nC | 10 V |
Vishay General Semiconductor - Diodes Division | TO-263 (D2PAK) | 4 V | MOSFET (Metal Oxide) | 77 mOhm | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1700 pF | 100 V | 20 V | N-Channel | -55 °C | 175 ░C | 28 A | 3.7 W 150 W | 72 nC | 10 V |