PJT7808 Series

Catalog

20V N-CHANNEL ENHANCEMENT MODE M

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	FET Feature	FET Feature [Max]	Technology	Configuration	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Panjit International Inc. PJT7808_R1_00001	67 pF	150 °C	-55 °C	900 mV	350 mW	500 mA	400 mOhm	6-TSSOP SC-88 SOT-363	1.2 V	Logic Level Gate	MOSFET (Metal Oxide)	2 N-Channel (Dual)	20 V	SOT-363	Surface Mount	1.4 nC