SI4860 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 11A 8SO
| Part | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4.5 V 10 V | Surface Mount | -55 °C | 150 °C | 18 nC | 30 V | 11 A | 20 V | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 1 V | 8-SOIC | N-Channel | 8 mOhm |
Vishay General Semiconductor - Diodes Division | 4.5 V 10 V | Surface Mount | -55 °C | 150 °C | 18 nC | 30 V | 11 A | 20 V | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 1 V | 8-SOIC | N-Channel | 8 mOhm |