NTTD4401F Series

Power MOSFET 20V 3.3A 90 mOhm Dual P-Channel Micro8 with Schottky Diode

Catalog

Power MOSFET 20V 3.3A 90 mOhm Dual P-Channel Micro8 with Schottky Diode

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Feature	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [custom]	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTTD4401FR2G	1.5 V	90 mOhm	750 pF	Surface Mount	Schottky Diode (Isolated)	20 V	8-MSOP 8-TSSOP	0.118 in	3 mm	P-Channel	2.4 A	8-MSOP	18 nC	780 mW	2.5 V 4.5 V	MOSFET (Metal Oxide)	10 V	-55 °C	150 °C
ON Semiconductor NTTD4401FR2	1.5 V	90 mOhm	750 pF	Surface Mount	Schottky Diode (Isolated)	20 V	8-MSOP 8-TSSOP	0.118 in	3 mm	P-Channel	2.4 A	8-MSOP	18 nC	780 mW	2.5 V 4.5 V	MOSFET (Metal Oxide)	10 V	-55 °C	150 °C

Power MOSFET 20V 3.3A 90 mOhm Dual P-Channel Micro8 with Schottky Diode

• Low VF and Low Leakage Schottky Diode

• Lower Component Placement and Inventory Costs along with Board Space Saving

• Logic Level Gate Drive - Can be driven by Logic ICs

• Pb-Free Package is Available

This 20 V P-Channel power MOSFET contains an integrated Schottky diode.