
DS1245W Series
Manufacturer: Analog Devices Inc./Maxim Integrated

IC NVSRAM 1M PARALLEL 34PWRCAP
| Part | Memory Format | Memory Organization | Access Time | Supplier Device Package | Write Cycle Time - Word, Page [y] | Write Cycle Time - Word, Page [x] | Voltage - Supply [Max] | Voltage - Supply [Min] | Technology | Memory Interface | Memory Size | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Memory Type | Write Cycle Time - Word, Page [custom] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 100 ns | 34-PowerCap Module | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Surface Mount | 85 C | -40 ¯C | 34-PowerCap™ Module | Non-Volatile | |||
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 150 ns | 34-PowerCap Module | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Surface Mount | 70 °C | 0 °C | 34-PowerCap™ Module | Non-Volatile | 150 ns | ||||
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 150 ns | 34-PowerCap Module | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Surface Mount | 70 °C | 0 °C | 34-PowerCap™ Module | Non-Volatile | 150 ns | ||||
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 150 ns | 32-EDIP | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 70 °C | 0 °C | 32-DIP Module | Non-Volatile | 150 ns | 15.24 mm | 0.6 in | ||
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 100 ns | 34-PowerCap Module | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Surface Mount | 70 °C | 0 °C | 34-PowerCap™ Module | Non-Volatile | |||
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 100 ns | 32-EDIP | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 70 °C | 0 °C | 32-DIP Module | Non-Volatile | 15.24 mm | 0.6 in | |
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 100 ns | 32-EDIP | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 85 C | -40 ¯C | 32-DIP Module | Non-Volatile | 15.24 mm | 0.6 in | |
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 100 ns | 32-EDIP | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 85 C | -40 ¯C | 32-DIP Module | Non-Volatile | 15.24 mm | 0.6 in | |
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 150 ns | 32-EDIP | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 70 °C | 0 °C | 32-DIP Module | Non-Volatile | 150 ns | 15.24 mm | 0.6 in | ||
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 100 ns | 32-EDIP | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 70 °C | 0 °C | 32-DIP Module | Non-Volatile | 15.24 mm | 0.6 in |