NVMFD027N10MCL Series

Dual N-Channel Power MOSFET 100 V, 28 A, 26 mΩ

Catalog

Dual N-Channel Power MOSFET 100 V, 28 A, 26 mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max	Mounting Type	Configuration	Grade	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Qualification
ON Semiconductor NVMFD027N10MCLT1G	7.4 A 28 A	8-DFN (5x6) Dual Flag (SO8FL-Dual)	11 nC	3.1 W 46 W	Surface Mount	2 N-Channel	Automotive	3 V	8-PowerTDFN	26 mOhm	720 pF	-55 °C	175 ░C	MOSFET (Metal Oxide)	100 V	AEC-Q101

Catalog

Dual N-Channel Power MOSFET 100 V, 28 A, 26 mΩ

Key Features

• Small Footprint (5x6 mm)

• Low RDS(on)

• Low QGand Capacitance

• NVMFWD040N10MCLT1G − Wettable Flank Option

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.