IRF620 Series

Catalog

MOSFET N-CH 200V 5.2A D2PAK

Part	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division IRF620STRRPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	14 nC	200 V	4 V	D2PAK	10 V	20 V	3 W 50 W	260 pF	Surface Mount	800 mOhm	5.2 A	-55 °C	150 °C	N-Channel
Vishay General Semiconductor - Diodes Division IRF620STRLPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	14 nC	200 V	4 V	D2PAK	10 V	20 V	3 W 50 W	260 pF	Surface Mount	800 mOhm	5.2 A	-55 °C	150 °C	N-Channel
Vishay General Semiconductor - Diodes Division IRF620	TO-220-3	MOSFET (Metal Oxide)	14 nC	200 V	4 V	TO-220AB	10 V	20 V		260 pF	Through Hole	800 mOhm	5.2 A	-65 °C	150 °C	N-Channel	50 W
Vishay General Semiconductor - Diodes Division IRF620S	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	14 nC	200 V	4 V	TO-263 (D2PAK)	10 V	20 V	3 W 50 W	260 pF	Surface Mount	800 mOhm	5.2 A	-55 °C	150 °C	N-Channel