GD25WD80 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 8MBIT SPI/DUAL 8SOP
| Part | Memory Organization | Technology | Package / Case | Package / Case | Mounting Type | Access Time | Supplier Device Package | Clock Frequency | Operating Temperature [Max] | Operating Temperature [Min] | Memory Format | Memory Size | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Type | Memory Interface | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Package / Case | Package / Case | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 1M x 8 | FLASH - NOR (SLC) | 0.209 in 5.3 mm | 8-SOIC | Surface Mount | 12 ns | 8-SOP | 100 MHz | 85 C | -40 ¯C | FLASH | 1024 KB | 1.65 V | 3.6 V | Non-Volatile | SPI - Dual I/O | 6 ms | 60 µs | |||
GigaDevice Semiconductor (HK) Limited | 1M x 8 | FLASH - NOR | 8-SOIC | Surface Mount | 8-SOP | 85 C | -40 ¯C | FLASH | 1024 KB | 1.65 V | 3.6 V | Non-Volatile | SPI - Quad I/O | 0.154 in | 3.9 mm | ||||||
GigaDevice Semiconductor (HK) Limited | 1M x 8 | FLASH - NOR (SLC) | 8-XFDFN Exposed Pad | Surface Mount | 12 ns | 8-USON (1.5x1.5) | 100 MHz | 85 C | -40 ¯C | FLASH | 1024 KB | 1.65 V | 3.6 V | Non-Volatile | SPI - Dual I/O | 6 ms | 60 µs | ||||
GigaDevice Semiconductor (HK) Limited | 1M x 8 | FLASH - NOR (SLC) | 8-SOIC | Surface Mount | 6 ns | 8-SOP | 104 MHz | 85 C | -40 ¯C | FLASH | 1024 KB | 1.65 V | 3.6 V | Non-Volatile | SPI - Dual I/O | 0.154 in | 3.9 mm | 6 ms 100 µs |