IXFN48 Series

Manufacturer: IXYS

Catalog

MOSFET N-CH 500V 48A SOT-227B

Part	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
IXYS IXFN48N50U2	MOSFET (Metal Oxide)	500 V	520 W	100 mOhm	SOT-227B	Chassis Mount	20 V	10 V	SOT-227-4 miniBLOC	4 V	150 °C	-40 °C	N-Channel	8400 pF	270 nC	48 A
IXYS IXFN48N60P	MOSFET (Metal Oxide)	600 V			SOT-227B	Chassis Mount	30 V	10 V	SOT-227-4 miniBLOC	5.5 V	150 °C	-55 °C	N-Channel	8860 pF	150 nC		140 mOhm	625 W
IXYS IXFN48N50Q	MOSFET (Metal Oxide)	500 V		100 mOhm	SOT-227B	Chassis Mount	20 V	10 V	SOT-227-4 miniBLOC		150 °C	-55 °C	N-Channel	7000 pF		48 A		500 W	4 V	190 nC
IXYS IXFN48N55	MOSFET (Metal Oxide)	550 V		110 mOhm	SOT-227B	Chassis Mount	20 V	10 V	SOT-227-4 miniBLOC	4.5 V	150 °C	-55 °C	N-Channel		330 nC	48 A		600 W			8900 pF
IXYS IXFN48N50U3	MOSFET (Metal Oxide)	500 V	520 W	100 mOhm	SOT-227B	Chassis Mount	20 V	10 V	SOT-227-4 miniBLOC	4 V	150 °C	-40 °C	N-Channel	8400 pF	270 nC	48 A
IXYS IXFN48N50	MOSFET (Metal Oxide)	500 V	520 W	100 mOhm	SOT-227B	Chassis Mount	20 V	10 V	SOT-227-4 miniBLOC	4 V	150 °C	-55 °C	N-Channel	8400 pF	270 nC	48 A