GB20SLT12 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 1.2KV 20A TO247-2
| Part | Technology | Voltage - Forward (Vf) (Max) @ If | Package / Case | Capacitance @ Vr, F | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Mounting Type | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | SiC (Silicon Carbide) Schottky | 2 V | TO-247-2 | 968 pF | 500 mA | 1.2 kV | 200 µA | 175 ░C | -55 °C | TO-247-2 | Through Hole | 0 ns |