LMG3410R150 Series
600-V 150-mΩ GaN with integrated driver and overcurrent protection
Manufacturer: Texas Instruments
Catalog
600-V 150-mΩ GaN with integrated driver and overcurrent protection
Key Features
• TI GaN process qualified through accelerated reliability in-application hard-switching profilesEnables high-density power conversion designsSuperior system performance over cascode or stand-alone GaN FETsLow inductance 8 mm × 8 mm QFN package for ease of design and layoutAdjustable drive strength for switching performance and EMI controlDigital fault status output signalOnly +12 V of unregulated supply neededIntegrated gate driverZero common source inductance20-ns propagation delay for high-frequency designTrimmed gate bias voltage to compensate for threshold variations ensures reliable switching25-V/ns to 100-V/ns adjustable slew rateRobust protectionRequires no external protection componentsOvercurrent protection with <100 ns responseGreater than 150-V/ns slew rate immunityTransient overvoltage immunityOvertemperature protectionUndervoltage lockout (UVLO) protection on all supply railsDevice Options:LMG3410R150: Latched overcurrent protectionLMG3411R150: Cycle-by-cycle overcurrent proectionTI GaN process qualified through accelerated reliability in-application hard-switching profilesEnables high-density power conversion designsSuperior system performance over cascode or stand-alone GaN FETsLow inductance 8 mm × 8 mm QFN package for ease of design and layoutAdjustable drive strength for switching performance and EMI controlDigital fault status output signalOnly +12 V of unregulated supply neededIntegrated gate driverZero common source inductance20-ns propagation delay for high-frequency designTrimmed gate bias voltage to compensate for threshold variations ensures reliable switching25-V/ns to 100-V/ns adjustable slew rateRobust protectionRequires no external protection componentsOvercurrent protection with <100 ns responseGreater than 150-V/ns slew rate immunityTransient overvoltage immunityOvertemperature protectionUndervoltage lockout (UVLO) protection on all supply railsDevice Options:LMG3410R150: Latched overcurrent protectionLMG3411R150: Cycle-by-cycle overcurrent proection
Description
AI
The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDSringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDSringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
