GD25Q32 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 32MBIT SPI/QUAD 8SOP
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Memory Interface | Memory Format | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Memory Size | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Package / Case | Package / Case | Memory Type | Mounting Type | Technology | Memory Organization | Clock Frequency | Write Cycle Time - Word, Page | Access Time | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | -40 °C | 105 °C | SPI - Quad I/O | FLASH | 50 µs | 2.4 ms | 4 MB | 8-SOP | 3.6 V | 2.7 V | 0.154 in | 8-SOIC | 3.9 mm | Non-Volatile | Surface Mount | FLASH - NOR | 4M x 8 | 120 MHz | |||
GigaDevice Semiconductor (HK) Limited | -40 °C | 125 °C | SPI - Quad I/O | FLASH | 4 MB | 8-USON (3x4) | 3.6 V | 2.7 V | 8-UDFN Exposed Pad | Non-Volatile | Surface Mount | FLASH - NOR (SLC) | 4M x 8 | 133 MHz | 4 ms 140 µs | 7 ns | |||||
GigaDevice Semiconductor (HK) Limited | -40 ¯C | 85 C | SPI - Quad I/O | FLASH | 70 µs | 2.4 ms | 4 MB | 8-USON (3x4) | 3.6 V | 2.7 V | 8-UDFN Exposed Pad | Non-Volatile | Surface Mount | FLASH - NOR (SLC) | 4M x 8 | 133 MHz | 7 ns | ||||
GigaDevice Semiconductor (HK) Limited | -40 ¯C | 85 C | SPI - Quad I/O | FLASH | 50 µs | 2.4 ms | 4 MB | 8-SOP | 3.6 V | 2.7 V | 0.154 in | 8-SOIC | 3.9 mm | Non-Volatile | Surface Mount | FLASH - NOR | 4M x 8 | 120 MHz | |||
GigaDevice Semiconductor (HK) Limited | -40 ¯C | 85 C | SPI - Quad I/O | FLASH | 50 µs | 2.4 ms | 4 MB | 8-SOP | 3.6 V | 2.7 V | 0.154 in | 8-SOIC | 3.9 mm | Non-Volatile | Surface Mount | FLASH - NOR | 4M x 8 | 120 MHz | |||
GigaDevice Semiconductor (HK) Limited | -40 °C | 105 °C | SPI - Quad I/O | FLASH | 4 MB | 8-SOP | 3.6 V | 2.7 V | 0.154 in | 8-SOIC | 3.9 mm | Non-Volatile | Surface Mount | FLASH - NOR (SLC) | 4M x 8 | 133 MHz | 4 ms 140 µs | 7 ns | |||
GigaDevice Semiconductor (HK) Limited | -40 °C | 105 °C | SPI - Quad I/O | FLASH | 50 µs | 2.4 ms | 4 MB | 8-SOP | 3.6 V | 2.7 V | 0.154 in | 8-SOIC | 3.9 mm | Non-Volatile | Surface Mount | FLASH - NOR | 4M x 8 | 120 MHz | |||
GigaDevice Semiconductor (HK) Limited | -40 ¯C | 85 C | SPI - Quad I/O | FLASH | 50 µs | 2.4 ms | 4 MB | 8-WSON (5x6) | 3.6 V | 2.7 V | 8-WDFN Exposed Pad | Non-Volatile | Surface Mount | FLASH - NOR | 4M x 8 | 120 MHz | |||||
GigaDevice Semiconductor (HK) Limited | -40 ¯C | 85 C | SPI - Quad I/O | FLASH | 50 µs | 2.4 ms | 4 MB | 8-SOP | 3.6 V | 2.7 V | 8-SOIC | Non-Volatile | Surface Mount | FLASH - NOR | 4M x 8 | 120 MHz | 0.209 in 5.3 mm |