RHRP8120 Series

8A, 1200V, Hyperfast Diode

Catalog

8A, 1200V, Hyperfast Diode

Part	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Speed	Technology	Voltage - Forward (Vf) (Max) @ If
ON Semiconductor RHRP8120-F102	70 ns	8 A	TO-220-2	1.2 kV	Through Hole	TO-220-2	175 ░C	-65 C	100 µA	200 mA 500 ns	Standard	3.2 V

Catalog

8A, 1200V, Hyperfast Diode

Key Features

• Hyperfast recovery Trr= 70ns (@IF= 8A)

• Max Forward Voltage, VF= 3.2V (@ TC= 25°C)

• 1200V Reverse Voltage and High Reliability

• Avalanche Energy Rated

• RoHS compliant

Description

The RHRP8120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.