US1M Series
Manufacturer: Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO214AC
| Part | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Speed | Package / Case | Reverse Recovery Time (trr) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Supplier Device Package | Current - Average Rectified (Io) | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 5 µA | 10 pF | 1.7 V | 200 mA 500 ns | DO-214AC SMA | 75 ns | -55 °C | 150 °C | Surface Mount | 1000 V | Standard | DO-214AC (SMA) | 1 A | ||
Taiwan Semiconductor Corporation | 5 µA | 10 pF | 1.7 V | 200 mA 500 ns | DO-214AC SMA | 75 ns | -55 °C | 150 °C | Surface Mount | 1000 V | Standard | DO-214AC (SMA) | 1 A | Automotive | AEC-Q101 |
Taiwan Semiconductor Corporation | 5 µA | 10 pF | 1.7 V | 200 mA 500 ns | DO-214AC SMA | 75 ns | -55 °C | 150 °C | Surface Mount | 1000 V | Standard | DO-214AC (SMA) | 1 A | Automotive | AEC-Q101 |