SI5905 Series

Catalog

MOSFET 2P-CH 8V 3A 1206-8

Part	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Feature	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Technology	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI5905DC-T1-GE3	3 A	1.1 W	450 mV	-55 °C	150 °C	8 V	Logic Level Gate	Surface Mount	90 mOhm	1206-8 ChipFET™	MOSFET (Metal Oxide)	2 P-Channel	9 nC
Vishay General Semiconductor - Diodes Division SI5905BDC-T1-E3	4 A	3.1 W	1 V	-55 °C	150 °C	8 V	Logic Level Gate	Surface Mount		1206-8 ChipFET™	MOSFET (Metal Oxide)	2 P-Channel	11 nC	80 mOhm	350 pF
Vishay General Semiconductor - Diodes Division SI5905DC-T1-E3	3 A	1.1 W	450 mV	-55 °C	150 °C	8 V	Logic Level Gate	Surface Mount	90 mOhm	1206-8 ChipFET™	MOSFET (Metal Oxide)	2 P-Channel	9 nC
Vishay General Semiconductor - Diodes Division SI5905BDC-T1-GE3	4 A	3.1 W	1 V	-55 °C	150 °C	8 V	Logic Level Gate	Surface Mount		1206-8 ChipFET™	MOSFET (Metal Oxide)	2 P-Channel	11 nC	80 mOhm	350 pF