IRFD320 Series

Catalog

MOSFET N-CH 400V 490MA 4DIP

Part	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division IRFD320PBF	1 W	Through Hole	1.8 Ohm	10 V	20 V	20 nC	400 V	4-DIP (0.300" 7.62mm)	N-Channel	4 V	490 mA	410 pF	MOSFET (Metal Oxide)	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division IRFD320	1 W	Through Hole	1.8 Ohm	10 V	20 V	20 nC	400 V	4-DIP (0.300" 7.62mm)	N-Channel	4 V	490 mA	410 pF	MOSFET (Metal Oxide)	-55 °C	150 °C