FDPC5030SG Series

30V Asymmetric Dual N-Channel POWERTRENCH® Power Clip MOSFET

Catalog

30V Asymmetric Dual N-Channel POWERTRENCH® Power Clip MOSFET

Part	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Configuration	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power - Max	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDPC5030SG	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	Power Clip 56	2 N-Channel (Dual) Asymmetrical	8-PowerWDFN	Surface Mount	17 A	25 A	24 nC	3 V	5 mOhm	1 W 1.1 W	1715 pF

Catalog

30V Asymmetric Dual N-Channel POWERTRENCH® Power Clip MOSFET

Key Features

• Q1 N-ChannelMax. RDS(on)= 5.0 mΩ at VGS= 10 V, ID= 17 AMax. RDS(on)= 6.5 mΩ at VGS= 4.5 V, ID= 14 A

• Q2 N-ChannelMax. RDS(on)= 2.4 mΩ at VGS= 10 V, ID= 25 AMax. RDS(on)= 3.0 mΩ at VGS= 4.5 V, ID= 22 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.