PJW3P06A Series

Catalog

60V P-CHANNEL ENHANCEMENT MODE M

Part	Package / Case	Grade	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Panjit International Inc. PJW3P06A-AU_R2_000A1	TO-261-4 TO-261AA	Automotive	20 V	4.5 V 10 V	3.1 W	P-Channel	MOSFET (Metal Oxide)	60 V	3 A	2.5 V	8.3 nC	170 mOhm	430 pF	AEC-Q101	SOT-223	Surface Mount	-55 °C	150 °C
Panjit International Inc. PJW3P06A_R2_00001	TO-261-4 TO-261AA		20 V	4.5 V 10 V	3.1 W	P-Channel	MOSFET (Metal Oxide)	60 V	3 A	2.5 V	8.3 nC	190 mOhm	430 pF		SOT-223	Surface Mount	-55 °C	150 °C